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| 2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 5(Pulse10) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=-0.3A VCB=10V, f=1MHz (Ta=25C) Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ V V MHz pF Unit A V 16.90.3 8.40.2 A 13.0min 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.3 ton (s) 1max tstg (s) 2.5max tf (s) 0.5max 2.54 3.9 BCE IC - VCE Characteristics (Typical) 5 1.8 A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) (IC/I B= 5) V C E( sat) 2 -55C (Case Temp) 125C (Case Temp) I C - VBE Temperature Characteristics (Typical) 5 (VCE=4V) 1.4 A 1A 4 Collector Current I C (A) 60 0m A 3 400 mA Collector Current I C (A) 25C (Case Temp) 4 3 200 mA 2 1 100 mA IB=50mA C( 25 12 0 0 1 2 3 4 0 0.01 0.05 0.1 0.5 1 5 0 0 -55 C ( 1 1 5C -55C (Case Temp) Temp) 25C (Case e Temp) 5C (Cas 12 2 (C se Cas Ca eT em Tem p) p e Te ) mp) V B E( sat) as 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Part No. b. Lot No. 1.0 Base-Emittor Voltage V B E( V) 1.6 Collector-Emitter Voltage V C E( V) Collector Current I C( A) h FE - IC Characteristics (Typical) (VCE=4V) 100 8 t on* t stg * t f - I C Characteristics (Typical) j - a( C /W) 5 j-a - t Characteristics ton*t s t g*t f ( s) DC C urrent G ain h FE VCC 200V IC:I B 1: I B2= 10:1:-2 1 0.5 tf t on 0.1 0.1 0.5 t s tg 10 5 Transient Thermal Resistance 50 Typ 5 Sw it ching Time 1 2 0.01 0.05 0.1 0.5 1 5 1 3 0.5 0.4 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Collector Cur rent I C( A) DC 10 1m s 10 Reverse Bias Safe Operating Area 20 30 P c - T a Derating s 5 Collect or Cur re nt I C( A) m M aximum Power Dissipa ti on P C( W) 0 50 s 10 W s ith 20 In fin 1 0.5 1 0.5 ite he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1% 10 Without Heatsink 2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 104 This datasheet has been download from: www..com Datasheets for electronics components. |
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